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| BYG23M Vishay Telefunken Fast Silicon Mesa SMD Rectifier Features D D D D D Glass passivated junction Low reverse current High reverse voltage Fast reverse recovery time Wave and reflow solderable Applications Freewheeling diodes in SMPS and converters Snubber diodes 15 811 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage= Repetitive peak reverse voltage Peak forward surge current tp=10ms, half sinewave Average forward current Tamb = 65C Junction and storage temperature range Pulse energy in avalanche mode, I(BR)R=1A non repetitive (inductive load switch off) Type Symbol VR= VRRM IFSM IFAV Tj=Tstg ER Value 1000 30 1.5 -55...+150 20 Unit V A A C mJ Maximum Thermal Resistance Tj = 25_C Parameter Junction case Junction ambient Test Conditions mounted on epoxy-glass hard tissue, 17mm2 35mm Cu mounted on epoxy-glass hard tissue, 50mm2 35mm Cu mounted on Al-oxid-ceramic (Al2O3), 50mm2 35mm Cu Symbol RthJC RthJA RthJA RthJA Value 25 150 125 100 Unit K/W K/W K/W K/W Document Number 86062 Rev. 1, 13-Aug-99 www.vishay.de * FaxBack +1-408-970-5600 1 (4) BYG23M Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Breakdown voltage Reverse recovery time Test Conditions IF=1.0A IF=1.0A, TJ = 150C VR=VRRM VR=VRRM, Tj=125C IR = 100 mA IF=0.5A, IR=1A, iR=0.25A Type Symbol VF VF IR IR V(BR)R trr Min Typ Max 1.7 1.35 5 50 75 Unit V V mA mA V ns 1000 Characteristics (Tj = 25_C unless otherwise specified) PR - Reverse Power Dissipation ( mW ) 100 160 RthJA= 140 120 100 80 60 40 80% 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 16096 VR = VRRM 125K/W 175K/W 100% IF - Forward Current ( A ) 10 Tj=150C Tj=25C 1 0.1 VF - Forward Voltage ( V ) 25 16094 50 75 100 125 150 Tj - Junction Temperature ( C ) Figure 1. Max. Forward Current vs. Forward Voltage 1.6 I FAV- Average Forward Current ( A ) 1.4 1.2 1.0 0.8 0.6 0.4 150K/W 0.2 0 0 16092 Figure 3. Max. Reverse Power Dissipation vs. Junction Temperature 1000 VR = VRRM I R - Reverse Current ( mA ) VR = VR RM half sinewave RthJA= 25K/W 125K/W 100 10 25 50 75 100 125 150 16095 1 25 50 75 100 125 150 Tj - Junction Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 2. Max. Average Forward Current vs. Ambient Temperature Figure 4. Max. Reverse Current vs. Junction Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 86062 Rev. 3, 09-Aug-99 BYG23M Vishay Telefunken 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0.1 CD - Diode Capacitance ( pF ) f=1MHz TJ=25_C 1.0 10.0 100.0 16093 VR - Reverse Voltage ( V ) Figure 5. Typ. Diode Capacitance vs. Reverse Voltage Dimensions in mm 14275 Document Number 86062 Rev. 1, 13-Aug-99 www.vishay.de * FaxBack +1-408-970-5600 3 (4) BYG23M Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 86062 Rev. 3, 09-Aug-99 |
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